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IXTN32P60P
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
SOT-227B (IXTN) Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = -10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = - 25V, f = 1MHz
Resistive Switching Times
V GS = -10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 Ω (External)
V GS = -10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
21
32
11.1
925
77
37
27
95
33
196
54
58
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
(M4 screws (4x) supplied)
R thJC
0.14 ° C/W
R thCS
Source-Drain Diode
0.05
° C/W
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
I RM
V GS = 0V
Repetitive, pulse width limited by T JM
I F = - 16A, V GS = 0V, Note 1
I F = - 16A, -di/dt = -150A/ μ s
V R = -100V, V GS = 0V
480
11.4
- 47.6
- 32
-128
- 2.8
A
A
V
nS
μ C
A
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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